发明名称 |
Two-dimensional (2D) material element with in-plane metal chalcogenide-based heterojunctions and devices including said element |
摘要 |
According to example embodiments, a two-dimensional (2D) material element may include a first 2D material and a second 2D material chemically bonded to each other. The first 2D material may include a first metal chalcogenide-based material. The second 2D material may include a second metal chalcogenide-based material. The second 2D material may be bonded to a side of the first 2D material. The 2D material element may have a PN junction structure. The 2D material element may include a plurality of 2D materials with different band gaps. |
申请公布号 |
US9595580(B2) |
申请公布日期 |
2017.03.14 |
申请号 |
US201414508378 |
申请日期 |
2014.10.07 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Shin Hyeonjin;Park Seongjun;Lee Jaeho;Heo Jinseong |
分类号 |
H01L29/06;H01L31/032;H01L29/73;H01L29/778;H01L29/10;H01L29/22;H01L29/221;C01B19/04;C01G25/00;C01G27/00;C01G39/06;C01G41/00;H01L29/24;H01L29/66;H01L29/74;H01L29/78;H01L29/792;H01L31/109;H01L29/861;H01L29/737;H01L31/0352 |
主分类号 |
H01L29/06 |
代理机构 |
Harness, Dickey & Pierce, P.L.C. |
代理人 |
Harness, Dickey & Pierce, P.L.C. |
主权项 |
1. A two-dimensional (2D) material element comprising:
a first 2D material including a first monolayer of crystalline material that includes a first metal chalcogenide-based material; and a second 2D material including a second monolayer of crystalline material that includes a second metal chalcogenide-based material, a side corresponding to a thickness of the second 2D material being chemically bonded to a side corresponding to a thickness of the first 2D material, the first and second monolayers of crystalline material being arranged laterally and in plane with each other, the first metal chalcogenide-based material includes a first metal atom, the second metal chalcogenide-based material includes a second metal atom, and the first and second metal atoms being different from each other. |
地址 |
Gyeonggi-do KR |