发明名称 Two-dimensional (2D) material element with in-plane metal chalcogenide-based heterojunctions and devices including said element
摘要 According to example embodiments, a two-dimensional (2D) material element may include a first 2D material and a second 2D material chemically bonded to each other. The first 2D material may include a first metal chalcogenide-based material. The second 2D material may include a second metal chalcogenide-based material. The second 2D material may be bonded to a side of the first 2D material. The 2D material element may have a PN junction structure. The 2D material element may include a plurality of 2D materials with different band gaps.
申请公布号 US9595580(B2) 申请公布日期 2017.03.14
申请号 US201414508378 申请日期 2014.10.07
申请人 Samsung Electronics Co., Ltd. 发明人 Shin Hyeonjin;Park Seongjun;Lee Jaeho;Heo Jinseong
分类号 H01L29/06;H01L31/032;H01L29/73;H01L29/778;H01L29/10;H01L29/22;H01L29/221;C01B19/04;C01G25/00;C01G27/00;C01G39/06;C01G41/00;H01L29/24;H01L29/66;H01L29/74;H01L29/78;H01L29/792;H01L31/109;H01L29/861;H01L29/737;H01L31/0352 主分类号 H01L29/06
代理机构 Harness, Dickey & Pierce, P.L.C. 代理人 Harness, Dickey & Pierce, P.L.C.
主权项 1. A two-dimensional (2D) material element comprising: a first 2D material including a first monolayer of crystalline material that includes a first metal chalcogenide-based material; and a second 2D material including a second monolayer of crystalline material that includes a second metal chalcogenide-based material, a side corresponding to a thickness of the second 2D material being chemically bonded to a side corresponding to a thickness of the first 2D material, the first and second monolayers of crystalline material being arranged laterally and in plane with each other, the first metal chalcogenide-based material includes a first metal atom, the second metal chalcogenide-based material includes a second metal atom, and the first and second metal atoms being different from each other.
地址 Gyeonggi-do KR