Bias circuits and methods for depletion mode semiconductor devices

摘要

A Radio Frequency (RF) amplifier includes a depletion mode semiconductor device having a gate, a bias device and an inverting circuit. The depletion mode semiconductor device may be a HEMT and/or a MESFET. The bias device is configured to generate a bias voltage. The inverting circuit is configured to generate an inverted bias voltage from the bias voltage, and to apply the inverted bias voltage to the gate. Related circuits and methods are described.

主权项

1. A Radio Frequency (RF) amplifier, comprising:
a first depletion mode semiconductor device including a first gate that is connected to an RF input signal; a bias device that is configured to generate a bias voltage, the bias device comprising a second depletion mode semiconductor device comprising a second gate that is connected to a reference voltage; and an inverting circuit that is configured to generate an inverted bias voltage from the bias voltage and to apply the inverted bias voltage to the first gate.