Apparatus of detecting transmittance of trench on infrared-transmittable material and method thereof

摘要

An apparatus is provided for detecting transmittance of a trench. The trench is located on an infrared-transmittable material, which can be a wafer. The wafer is obtained after a ditching process. An image of the wafer is fetched. The contrast of the image is greatly enhanced. The contrast-enhanced image is used for automated analysis of the transmittance of the trench. Accuracy of detecting the transmittance is improved. Hence, the present invention uses a simple structure to detect transmittance defects of the trench for ensuring goodness of the wafer.

主权项

1. An apparatus of detecting transmittance of a trench on an infrared-transmittable material, comprising
a light source emitting a visible light and an infrared light projected onto an infrared-transmittable material having a trench cut therein such that first wavelengths of the infrared light are transmitted in non-cut-through portions of the trench and second wavelengths above and below the first wavelengths are reflected by the trench; an adjustable fixing support having an end located on a base and another end connected to said light source, said fixing support controlling an incidence angle of said light source shining on said infrared-transmittable material; a light intensity sensor located at a corresponding direction of the same side to said light source and being located at a right angle to said infrared-transmittable material, said light intensity sensor collecting bands of a light reflected by said infrared-transmittable material to obtain information of intensity of said light reflected; and a trench-transmittance analysis unit connected with said light intensity sensor, preprocessing an image of said light reflected from the infrared-transmittable material, detecting crack defects and transmittance of said trench after defining a street area bounding the trench, receiving said information of intensity of said light reflected to obtain information of said transmittance of said trench, and classifying said infrared-transmittable material by said crack defects and said transmittance of said trench detected.