发明名称 Capacitive micromachined ultrasonic transducer and method of fabricating the same
摘要 A capacitive micromachined ultrasonic transducer includes a device substrate including a first trench confining a plurality of first parts corresponding to a plurality of elements and a second trench confining a second part separated from the plurality of first parts, a supporting unit provided on the device substrate for confining a plurality of cavities corresponding to each of the plurality of elements, a membrane provided on the supporting unit to cover the plurality of cavities, an upper electrode provided on the membrane and electrically connected to the second part in the second trench through a via hole passing through the membrane and the supporting unit, and a through-silicon via (TSV) substrate provided on a lower surface of the device substrate, and including a plurality of first via metals connected to the plurality of first parts and a second via metal connected to the second part.
申请公布号 US9596528(B2) 申请公布日期 2017.03.14
申请号 US201414280725 申请日期 2014.05.19
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 Shim Dong-sik;Hong Seog-woo;Chung Seok-whan;Kim Chang-jung
分类号 H04R1/00;H01L21/768;H01L21/304;H01L23/48;H01L21/02;B06B1/02 主分类号 H04R1/00
代理机构 Sughrue Mion, PLLC 代理人 Sughrue Mion, PLLC
主权项 1. A capacitive micromachined ultrasonic transducer comprising: a device substrate comprising (i) a first trench confining a plurality of first parts corresponding to a plurality of elements, and (ii) a second trench confining a second part separated from the plurality of first parts; a supporting unit provided on the device substrate for confining a plurality of cavities corresponding to each of the plurality of elements; a membrane provided on the supporting unit to cover the plurality of cavities; an upper electrode provided on the membrane and electrically connected to the second part in the second trench of the device substrate through a via hole passing through the membrane and the supporting unit; and a through-silicon via (TSV) substrate provided on a lower surface of the device substrate, the TSV substrate comprising a plurality of first via metals connected to the plurality of first parts in the device substrate and a second via metal connected to the second part in the device substrate.
地址 Suwon-si KR