Crossed nanobeam structure for a low-threshold germanium laser

摘要

A crossed nanobeam structure for strain engineering in semiconductor devices is provided. For example, such a structure can be used for a low-threshold germanium laser. While the photonic crystal nanobeam enables light confinement in a subwavelength volume with small optical loss, another crossing nanobeam induces high tensile strain in the small region where the optical mode is tightly confined. As maintaining a small optical loss and a high tensile strain reduces the required pumping for achieving net optical gain beyond cavity losses, this technique can be used to develop an extremely low-threshold Ge laser source. Moreover, the structure can be easily integrated into electronic and photonic circuits.

主权项

1. A semiconductor structure comprising:
a semiconductor member configured as a first beam having an active region sandwiched between two side regions along its length; and two stress members affixed to opposite lateral surfaces of the active region; wherein the stress members are configured to provide mechanical stress to the active region, whereby the active region as a whole is subject to mechanical strain; wherein the stress members are configured to form a second beam perpendicular to the first beam.