Switching device for power conversion and power conversion device

摘要

The present invention provides a switching device (100) for power conversion in which a first gate electrode (6), a p-type channel layer (2) having an n-type emitter region (3), a second gate electrode (13), and a p-type floating layer (15) are repeatedly arranged in order on the surface side of an n-type semiconductor substrate (1). An interval a between the two gates (6, 13) that sandwich the p-type channel layer (2) is configured to be smaller than an interval b between the two gates (13, 6) that sandwich the p-type floating layer (15). The first gate electrode (6) and the second gate electrode (13) are both supplied with drive signals having a time difference in drive timing.

主权项

1. A switching device for power conversion, comprising:
a semiconductor layer of a first conductivity type formed on a semiconductor substrate; a channel layer of a second conductivity type abutting the semiconductor layer of the first conductivity type and formed on a first surface of the semiconductor substrate; a set of gate electrodes comprising a first gate electrode and a second gate electrode provided to respectively abut two trenches with the semiconductor layer, the channel layer, and a gate insulating film interposed, the trenches being mutually adjacent to a plurality of trenches formed on the first surface of the semiconductor substrate so as to penetrate the channel layer; an emitter region of a first conductivity type formed to abut each of the first gate electrode and the second gate electrode through the gate insulating film, at a part of a surface of the channel layer sandwiched between the first gate electrode and the second gate electrode that belong to a same group in the set of gate electrodes; an emitter electrode to which the emitter region of the first conductivity type and the channel layer of the second conductivity type are electrically connected; a floating layer of a second conductivity type sandwiched between two gate electrodes that belong to a mutually different group of the set of gate electrodes and are adjacent to each other, the floating layer being the channel layer insulated from the emitter electrode; a collector layer of a second conductivity type abutting the semiconductor layer of the first conductivity type and formed on a second surface of the semiconductor substrate; and a collector electrode electrically connected to the collector layer of the second conductivity type, wherein when an interval between the first gate electrode and the second gate electrode that belong to the same set is taken to be a, and an interval between two gate electrodes that belong to the mutually different group and are adjacent to each other is taken to be b, the respective gate electrodes are arranged to meet b>a, and wherein a first drive signal and a second drive signal having a time difference in drive timing are respectively supplied to the first gate electrode and the second gate electrode.