Transistor with performance boost by epitaxial layer

摘要

The present disclosure relates to a transistor device. In some embodiments, the transistor device has an epitaxial layer disposed over a substrate. The epitaxial layer is arranged between a source region and a drain region separated along a first direction. Isolation structures are arranged on opposite sides of the epitaxial layer along a second direction, perpendicular to the first direction. A gate dielectric layer is disposed over the epitaxial layer, and a conductive gate electrode is disposed over the gate dielectric layer. The epitaxial layer overlying the substrate improves the surface roughness of the substrate, thereby improving transistor device performance.

主权项

1. A transistor device, comprising:
an epitaxial layer disposed over a substrate between a source region and a drain region separated along a first direction; isolation structures extending into the substrate on opposite sides of the epitaxial layer along a second direction, perpendicular to the first direction; a gate dielectric layer disposed over the epitaxial layer, wherein the gate dielectric layer comprises a non-planar layer that curves towards the substrate along outer edges of the gate dielectric layer; and a conductive gate electrode disposed over the gate dielectric layer.