发明名称 Low-Offset Graphene Hall Sensor
摘要 A Graphene Hall sensor (GHS) may be provided with a modulated gate bias signal in which the modulated gate bias signal alternates at a modulation frequency between a first voltage that produces a first conductivity state in the GHS and a second voltage that produces approximately a same second conductivity state in the GHS. A bias current may be provided through a first axis of the GHS. A resultant output voltage signal may be provided across a second axis of the Hall sensor that includes a modulated Hall voltage and an offset voltage, in which the Hall voltage is modulated at the modulation frequency. An amplitude of the Hall voltage that does not include the offset voltage may be extracted from the resultant output voltage signal.
申请公布号 US2017067970(A1) 申请公布日期 2017.03.09
申请号 US201514936631 申请日期 2015.11.09
申请人 Texas Instruments Incorporated 发明人 Polley Arup;Venugopal Archana;Colombo Luigi;Doering Robert R.
分类号 G01R33/07;H01L43/06;H01L43/10;H01L43/04 主分类号 G01R33/07
代理机构 代理人
主权项 1. A method for operating a graphene Hall sensor, the method comprising: providing a modulated gate bias signal to a gate of the Graphene Hall sensor (GHS), in which the modulated gate bias signal alternates at a modulation frequency between a first voltage that produces a first conductivity state in the GHS and a second voltage that produces approximately a same second conductivity state in the GHS; providing a bias current through a first axis of the GHS; obtaining a resultant output voltage signal across a second axis of the Hall sensor that includes a modulated Hall voltage and an offset voltage, in which the Hall voltage is modulated at the modulation frequency; and extracting an amplitude of the Hall voltage that does not include the offset voltage.
地址 Dallas TX US