MASK BLANK, PHASE SHIFT MASK, PHASE SHIFT MASK MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

Provided is a mask blank for a phase shift mask, said mask blank being provided with an etching stopper film that satisfies the characteristics of having: higher tolerance than a translucent substrate with respect to dry etching wherein a fluorine-based gas is used when forming a phase shift pattern; high tolerance with respect to chemical cleaning; and high transmissivity with respect to exposure light. This mask blank provided with a light blocking film on a main surface of a translucent substrate is characterized by being provided with a structure wherein, on the translucent substrate, an etching stopper film, a phase shift film, and a light blocking film are laminated in this order. The mask blank is also characterized in that: the phase shift film is formed of a material containing silicon and oxygen; and the etching stopper film is formed of a material containing silicon, aluminum, and oxygen.