发明名称 NITRIDE SURFACE-EMITTING LASER
摘要 A first nitride surface-emitting laser comprising: a first dielectric multilayer film and a second dielectric multilayer film that are provided upon a substrate and are adjacent to each other; a current injection region provided at a position facing the first dielectric multilayer film; and an opening provided between the first dielectric multilayer film and the second dielectric multilayer film. When the distance between the first dielectric multilayer film and the second dielectric multilayer film is W and the thickness of the first dielectric multilayer film in the normal direction relative to the substrate is H, the first dielectric multilayer film, the opening, and the current injection region are formed such that an angle θ is at least arctan (H/W) and no more than 90°, said angle θ being between the upper surface of the first dielectric multilayer film and a line connecting, by the shortest distance, an end edge of the upper surface of the first dielectric multilayer film and an end edge of the current injection region.
申请公布号 WO2017038447(A1) 申请公布日期 2017.03.09
申请号 WO2016JP73882 申请日期 2016.08.16
申请人 SONY CORPORATION 发明人 IZUMI, Shoichiro;HAMAGUCHI, Tatsushi;FUTAGAWA, Noriyuki;KURAMOTO, Masaru
分类号 H01S5/183;H01S5/343 主分类号 H01S5/183
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