OXIDE SEMICONDUCTOR SECONDARY BATTERY AND METHOD FOR MANUFACTURING SAME

摘要

An oxide semiconductor secondary battery according to the present embodiment is provided with: a first electrode (14); an n-type metal oxide semiconductor layer (16) formed on the first electrode (14); a charge layer (18) that is formed on the n-type metal oxide semiconductor layer (16) and that is made of material containing an insulating material and an n-type metal oxide semiconductor; a p-type metal oxide semiconductor layer (20) formed on the charge layer (18); and a second electrode 22 formed on the p-type metal oxide semiconductor layer (20). The n-type metal oxide semiconductor layer (16) is characterized by containing a titanium dioxide having an anatase structure or an amorphous structure.