| 发明名称 |
Memory Devices and Method of Forming Same |
| 摘要 |
A method comprises forming a memory gate structure adjacent to a control gate structure over a substrate, wherein a charge storage layer is between the memory gate structure and the control gate structure and a top surface of the memory gate structure is covered by a gate mask layer, forming a first spacer along sidewalls of the memory gate structure and the gate mask layer, wherein a sidewall of the memory gate structure is fully covered by the first spacer, applying an etching process to the charge storage layer to form an L-shaped charge storage layer and forming a first drain/source region adjacent to the memory gate structure and a second drain/source region adjacent to the control gate structure. |
| 申请公布号 |
US2017069640(A1) |
申请公布日期 |
2017.03.09 |
| 申请号 |
US201615355624 |
申请日期 |
2016.11.18 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Wu Chang-Ming;Wu Wei Cheng;Liu Shih-Chang;Tsai Chia-Shiung;Chuang Harry-Hak-Lay |
| 分类号 |
H01L27/115;H01L29/66;H01L29/788;H01L29/423 |
主分类号 |
H01L27/115 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
forming a memory gate structure adjacent to a control gate structure over a substrate, wherein a charge storage layer is between the memory gate structure and the control gate structure and a top surface of the memory gate structure is covered by a gate mask layer; forming a first spacer along sidewalls of the memory gate structure and the gate mask layer, wherein a sidewall of the memory gate structure is fully covered by the first spacer; applying an etching process to the charge storage layer to form an L-shaped charge storage layer; and forming a first drain/source region adjacent to the memory gate structure and a second drain/source region adjacent to the control gate structure. |
| 地址 |
Hsin-Chu TW |
