SEMICONDUCTOR DEVICE

摘要

There is provided a semiconductor device capable of suppressing generation of leakage current of a diode, by applying a voltage to a gate of a gated junction diode (GJD). The semiconductor device includes an internal circuit connected with an input-output terminal, and an electrostatic discharge (ESD) protection circuit configured to protect the internal circuit from ESD, the ESD protection circuit including a first diode, wherein the first diode includes a first gate which is formed on a substrate and to which a first recovery voltage is applied, a first well of a first conductivity type which is formed within the substrate and under the first gate, a first impurity region of the first conductivity type which is formed on one side of the first gate and within the first well and is higher in doping concentration than that of the first well, and a second impurity region of a second conductivity type which is formed on other side of the first gate and within the first well.

主权项

1. A semiconductor device, comprising:
an internal circuit connected with an input-output terminal; and an electrostatic discharge (ESD) protection circuit connected to the internal circuit, the ESD protection circuit including a first diode, wherein the first diode includes:
a first gate which is formed on a substrate and to which a first recovery voltage is applied,a first well of a first conductivity type which is formed within the substrate and under the first gate,a first impurity region of the first conductivity type which is formed on one side of the first gate and within the first well, the first impurity region is higher in doping concentration than that of the first well, anda second impurity region of a second conductivity type which is formed on other side of the first gate and within the first well.