Ultra-Thin Semiconductor Component Fabrication Using a Dielectric Skeleton Structure

摘要

In one implementation, a method for forming ultra-thin semiconductor components includes fabricating multiple devices including a first device and a second device in a semiconductor wafer, and forming a street trench within the semiconductor wafer and between the first and second devices. The method continues with forming a dielectric skeleton structure over the semiconductor wafer, the dielectric skeleton structure laterally extending to at least partially cover the first and second devices, while also substantially filling the street trench. The method continues with thinning the semiconductor wafer from a backside to expose the dielectric skeleton structure in the street trench to form a first ultra-thin semiconductor component having the first device, and a second ultra-thin semiconductor component having the second device. The method can conclude with cutting through the dielectric skeleton structure to singulate the first and second ultra-thin semiconductor components.

主权项

1. A method comprising:
fabricating a plurality of devices including a first device and a second device in a semiconductor wafer; forming a street trench within said semiconductor wafer and between said first and second devices; forming a dielectric skeleton structure over said semiconductor wafer, said dielectric skeleton structure laterally extending to at least partially cover said first and second devices, said dielectric skeleton structure substantially filling said street trench; thinning said semiconductor wafer from a backside to expose said dielectric skeleton structure in said street trench to form a first ultra-thin semiconductor component having said first device, and a second ultra-thin semiconductor component having said second device; cutting through said dielectric skeleton structure to singulate said first and second ultra-thin semiconductor components.