TOPSIDE STRUCTURES FOR AN INSULATED GATE BIPOLAR TRANSISTOR (IGBT) DEVICE TO ACHIEVE IMPROVED DEVICE PERFOREMANCES

摘要

This invention discloses an insulated gate bipolar transistor (IGBT) device formed in a semiconductor substrate. The IGBT device has a split-shielded trench gate that includes an upper gate segment and a lower shield segment. The IGBT device may further include a dummy trench filled with a dielectric layer disposed at a distance away from the split-shielded trench gate. The IGBT device further includes a body region extended between the split-shielded trench gate and the dummy trench encompassing a source region surrounding the split-shielded trench gate near a top surface of the semiconductor substrate. The IGBT device further includes a heavily doped N region disposed below the body region and above a source-dopant drift region above a bottom body-dopant collector region at a bottom surface of the semiconductor substrate. In an alternative embodiment, the IGBT may include a planar gate with a trench shield electrode.

主权项

1. An insulated gate bipolar transistor (IGBT) device comprising:
a semiconductor substrate including a lower semiconductor layer of a second conductivity type and an upper semiconductor layer of a first conductivity type located over the lower semiconductor layer; a shield gate trench located at the top of the semiconductor substrate, said shield gate trench having a shield electrode at its bottom, and a gate electrode at its top; a heavily doped layer having a first conductivity type, said heavily doped layer being more heavily doped than the upper semiconductor layer, said heavily doped layer being located approximately at the same level of the shield electrode, wherein said IGBT device is a vertical device.