| 发明名称 |
SUPPORT FOR LONG CHANNEL LENGTH NANOWIRE TRANSISTORS |
| 摘要 |
A nanowire device includes a first component formed on a substrate and a second component disposed apart from the first component on the substrate. A nanowire is configured to connect the first component to the second component. An anchor pad is formed along a span of the nanowire and configured to support the nanowire along the span to prevent sagging. |
| 申请公布号 |
US2017069715(A1) |
申请公布日期 |
2017.03.09 |
| 申请号 |
US201615354142 |
申请日期 |
2016.11.17 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Balakrishnan Karthik;Lauer Isaac;Yamashita Tenko;Sleight Jeffrey W. |
| 分类号 |
H01L29/06;H01L29/423;H01L29/66;H01L29/786 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for supporting a nanowire device channel, comprising:
connecting a source to a drain using at least one nanowire as a device channel; and supporting the at least one nanowire with an anchor pad formed along a span of the at least one nanowire, wherein the anchor pad is disposed along the span with a distance from the source or drain of about 200 nm to form nanowire segments. |
| 地址 |
Armonk NY US |
