CAPACITOR AND A SEMICONDUCTOR DEVICE INCLUDING THE SAME

摘要

A semiconductor device is disclosed. The semiconductor device includes a substrate and capacitor electrically connected to the substrate. The capacitor includes a lower electrode, a dielectric layer disposed on the lower electrode, and an upper electrode disposed on the dielectric layer. The upper electrode includes a first electrode on the dielectric layer and a second electrode on the first electrode, such that the first electrode is disposed between the dielectric layer and the second electrode. The first electrode contains metal oxynitride having a formula of MxOyNz, in which an atomic ratio (y/x) of oxygen (O) to metallic element (M) is a value in the range from 0.5 to 2.

主权项

1. A semiconductor device, comprising:
a substrate; and a capacitor formed on the substrate,wherein the capacitor includes:
a lower electrode; a dielectric layer disposed on the lower electrode; and an upper electrode disposed on the dielectric layer, wherein the upper electrode comprises a first electrode disposed on the dielectric layer and a second electrode disposed on the first electrode, such that the first electrode is between the dielectric layer and the second electrode, and wherein the first electrode contains metal oxynitride having a formula of MxOyNz, in which an atomic ratio (y/x) of oxygen (O) to metallic element (M) has a value selected from a range between 0.5 and 2.