发明名称 |
MULTILAYER CROWN-SHAPED MIM CAPACITOR AND MANUFACTURING METHOD THEREOF |
摘要 |
A multi-layer, crown-shaped MIM capacitor includes a base having therein conductive region, an inter-metal dielectric (IMD) layer on the base, a capacitor trench penetrating through the IMD layer and exposing the conductive region, a capacitor lower electrode structure including a first electrode and a second electrode surrounded by the first electrode, a conductive supporting pedestal within the capacitor trench for fixing and electrically connecting the bottom portions of the first and second electrodes, a capacitor dielectric layer conformally lining the first and second electrodes and a top surface of the conductive supporting pedestal, and a capacitor upper electrode on the capacitor dielectric layer. |
申请公布号 |
US2017069710(A1) |
申请公布日期 |
2017.03.09 |
申请号 |
US201614986717 |
申请日期 |
2016.01.03 |
申请人 |
Powerchip Technology Corporation |
发明人 |
Che Shyng-Yeuan;Wong Wen-Yi |
分类号 |
H01L49/02 |
主分类号 |
H01L49/02 |
代理机构 |
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代理人 |
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主权项 |
1. A multi-layer, crown-shaped metal-insulator-metal (MIM) capacitor, comprising:
a base having therein a conductive region disposed within a capacitor-forming region; an inter-metal dielectric (IMD) layer on the base and covering the capacitor-forming region; a capacitor trench disposed within the capacitor-forming region and penetrating through the IMD layer, thereby exposing a portion of the conductive region; a concentric capacitor lower electrode structure within the capacitor trench, the concentric capacitor lower electrode structure including a first electrode and a second electrode surrounded by the first electrode, wherein the first electrode is in direct contact with the conductive region; a conductive supporting pedestal within the capacitor trench for fixing and electrically connecting bottom portions of the first and second electrodes; a capacitor dielectric layer conformally lining the first and second electrodes and a top surface of the conductive supporting pedestal; and a capacitor upper electrode on the capacitor dielectric layer. |
地址 |
Hsinchu TW |