发明名称 MULTILAYER CROWN-SHAPED MIM CAPACITOR AND MANUFACTURING METHOD THEREOF
摘要 A multi-layer, crown-shaped MIM capacitor includes a base having therein conductive region, an inter-metal dielectric (IMD) layer on the base, a capacitor trench penetrating through the IMD layer and exposing the conductive region, a capacitor lower electrode structure including a first electrode and a second electrode surrounded by the first electrode, a conductive supporting pedestal within the capacitor trench for fixing and electrically connecting the bottom portions of the first and second electrodes, a capacitor dielectric layer conformally lining the first and second electrodes and a top surface of the conductive supporting pedestal, and a capacitor upper electrode on the capacitor dielectric layer.
申请公布号 US2017069710(A1) 申请公布日期 2017.03.09
申请号 US201614986717 申请日期 2016.01.03
申请人 Powerchip Technology Corporation 发明人 Che Shyng-Yeuan;Wong Wen-Yi
分类号 H01L49/02 主分类号 H01L49/02
代理机构 代理人
主权项 1. A multi-layer, crown-shaped metal-insulator-metal (MIM) capacitor, comprising: a base having therein a conductive region disposed within a capacitor-forming region; an inter-metal dielectric (IMD) layer on the base and covering the capacitor-forming region; a capacitor trench disposed within the capacitor-forming region and penetrating through the IMD layer, thereby exposing a portion of the conductive region; a concentric capacitor lower electrode structure within the capacitor trench, the concentric capacitor lower electrode structure including a first electrode and a second electrode surrounded by the first electrode, wherein the first electrode is in direct contact with the conductive region; a conductive supporting pedestal within the capacitor trench for fixing and electrically connecting bottom portions of the first and second electrodes; a capacitor dielectric layer conformally lining the first and second electrodes and a top surface of the conductive supporting pedestal; and a capacitor upper electrode on the capacitor dielectric layer.
地址 Hsinchu TW