| 发明名称 |
DEEP TRENCH ISOLATION STRUCTURE IN IMAGE SENSOR DEVICE |
| 摘要 |
An image sensor device includes a substrate having a front surface and a back surface, and a deep trench disposed at the front surface of the substrate. The deep trench has sidewalls, a bottom and an opening. A dielectric layer is disposed along the sidewalls and the bottom of the deep trench. An epitaxial layer is disposed on the front surface of the substrate. The deep trench and the epitaxial layer collectively define an air chamber. The deep trench has a chamfered portion at an interface between the epitaxial layer and the front surface of the substrate. The chamfered portion is free of dielectric layer. |
| 申请公布号 |
US2017069670(A1) |
申请公布日期 |
2017.03.09 |
| 申请号 |
US201615356578 |
申请日期 |
2016.11.19 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHEN Hsin-Hung;YAUNG Dun-Nian;LIU Jen-Cheng;KALNITSKY Alexander;WANG Wen-De |
| 分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An image sensor device, comprising:
a substrate having a front surface and a back surface; a deep trench disposed at the front surface of the substrate, the deep trench having sidewalls, a bottom and an opening; a dielectric layer disposed along the sidewalls and the bottom of the deep trench; and an epitaxial layer disposed on the front surface of the substrate, wherein the deep trench and the epitaxial layer collectively define an air chamber. |
| 地址 |
Hsinchu TW |
