SEMICONDUCTOR DEVICE ALLOWING METAL LAYER ROUTING FORMED DIRECTLY UNDER METAL PAD

摘要

A semiconductor device may include a metal pad and a first specific metal layer routing. The metal pad is positioned on a first metal layer of the semiconductor device and is directly contacting the first metal layer. The first specific metal layer routing is formed on a second metal layer of the semiconductor device and under the metal pad. In addition, the semiconductor device may include at least one via plug for connecting the first specific metal layer routing to at least one metal region in the first metal layer, where the aforementioned at least one via plug is formed directly under the metal pad.

主权项

1. A semiconductor device, comprising:
a metal pad, positioned in a first metal layer of the semiconductor device; a first specific metal layer routing, formed in a second metal layer of the semiconductor device and under the metal pad; and at least one via plug for connecting the first specific metal layer routing to at least one metal region in the first metal layer, wherein the via plug is formed directly under the metal pad.