MEMORY STRUCTURE

摘要

A memory structure is provided. The memory structure comprises M array regions and N contact regions. M is an integer ≧2. N is an integer ≧M. Each array region is coupled to at least one contact region. Each contact region comprises a stair structure and a plurality of contacts. The stair structure comprises alternately stacked conductive layers and insulating layers. Each contact is connected to one conductive layer of the stair structure. Two array regions which are adjacent to each other are spatially separated by two contact regions, which are coupled to the two array regions, respectively.

主权项

1. A memory structure, comprising:
M array regions, wherein M is an integer ≧2; and N contact regions, wherein N is an integer ≧M, each of the M array regions is coupled to at least one of the N contact regions, and each of the N contact regions comprises: a stair structure comprising alternately stacked conductive layers and insulating layers; and a plurality of contacts, wherein each of the contacts is connected to one of the conductive layers of the stair structure; wherein two of the M array regions which are adjacent to each other are spatially separated by two of the N contact regions, which are coupled to the two of the M array regions, respectively.