MICROWAVE PROBE, PLASMA MONITORING SYSTEM INCLUDING THE MICROWAVE PROBE, AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE USING THE SYSTEM

摘要

Disclosed herein are a microwave probe capable of precisely detecting a plasma state in a plasma process, a plasma monitoring system including the probe, and a method of fabricating a semiconductor device using the system. The microwave probe includes a body extending in one direction and a head which is connected to one end of the body and has a flat plate shape. In addition, in the plasma process, the microwave probe is non-invasively coupled to a chamber such that a surface of the head contacts an outer surface of a viewport of the chamber, and the microwave probe applies a microwave into the chamber through the head and receives signals generated inside the chamber through the head.

主权项

1. A method of fabricating a semiconductor device, the method comprising:
non-invasively coupling a microwave probe to a viewport of a chamber for a plasma process; arranging a wafer inside the chamber; generating plasma by injecting a process gas into the chamber and applying RF power to the chamber; applying a microwave into the chamber through the microwave probe, and receiving signals generated inside the chamber through the microwave probe; and detecting a resonant frequency among the received signals, and analyzing a plasma state inside the chamber based on the resonant frequency, wherein the microwave probe comprises a body and a head at a first end of the body, and the applying of the microwave and the receiving of the signals are performed through the head which contacts an outer surface of the viewport during the non-invasively coupling the microwave probe to the viewport.