| 发明名称 |
METHOD OF FABRICATING GRAPHENE NANO-MESH |
| 摘要 |
Example embodiments relate to a method of fabricating a graphene nano-mesh by selectively growing an oxide layer on a defect site of a graphene layer and etching the oxide layer to form the graphene nano-mesh. The method includes forming a graphene layer on a catalyst layer, forming an oxide layer on a defect site of the graphene layer, forming the graphene nano-mesh including a plurality of openings by etching the oxide layer, and transferring, after removing the catalyst layer, the graphene nano-mesh onto a substrate. |
| 申请公布号 |
US2017069436(A1) |
申请公布日期 |
2017.03.09 |
| 申请号 |
US201615066780 |
申请日期 |
2016.03.10 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
LEE Jooho;KIM Yongsung;LEE Changseung |
| 分类号 |
H01G11/86;C23C16/50;C23C16/40;C23C16/455;H01G11/36;C23C16/26 |
主分类号 |
H01G11/86 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of fabricating a graphene nano-mesh, the method comprising:
forming a graphene layer on a catalyst layer; forming an oxide layer on at least one defect site of the graphene layer; forming a graphene nano-mesh including a plurality of openings by etching the oxide layer; and transferring, after removing the catalyst layer, the graphene nano-mesh onto a substrate. |
| 地址 |
Suwon-si KR |
