| 发明名称 |
MEMORY CIRCUIT INCLUDING PRE-CHARGING UNIT, SENSING UNIT, AND SINK UNIT AND METHOD FOR OPERATING SAME |
| 摘要 |
A memory circuit includes a pre-charging unit configured to charge a metal bit line during a pre-charging period, a sensing unit configured to sense a status of a memory cell coupled to the metal bit line during the pre-charging period, and a sink circuit configured to provide a sink current during the pre-charging period based on the status of the memory cell sensed by the sensing unit. |
| 申请公布号 |
US2017069360(A1) |
申请公布日期 |
2017.03.09 |
| 申请号 |
US201514845661 |
申请日期 |
2015.09.04 |
| 申请人 |
Macronix International Co., Ltd. |
发明人 |
CHEN Chung-Kuang |
| 分类号 |
G11C7/12 |
主分类号 |
G11C7/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A memory circuit, comprising:
a pre-charging unit configured to charge a metal bit line during a pre-charging period; a sensing unit configured to sense a status of a memory cell coupled to the metal bit line; and a sink circuit configured to provide a sink current during the pre-charging period based on the status of the memory cell sensed by the sensing unit. |
| 地址 |
Hsinchu TW |
