Small size sputtering target and high vacuum sputtering apparatus using the same

摘要

A high vacuum sputtering apparatus is provided comprising a vacuum chamber (4) in which a substrate (2) to be processed is disposed opposite a small size sputtering target (1) having an outer diameter less than one and half times the diameter of the substrate (2). The target has a section (3) inclined toward the outer periphery thereof on the surface disposed opposite to the substrate (2). The internal pressure of the vacuum chamber (4) is maintained to less than 1 x 10<-3> for sputtering, thereby obtaining an improved distribution of film thickness and an enhanced coverage symmetry for sputtering. <IMAGE>