MOS TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

摘要

A MOS transistor includes a semiconductor layer resting on an insulator and having a substantially planar upper surface. The semiconductor layer extends down to a first depth in the channel region, and down to a second depth, greater than the first depth, in the source and drain regions. In the channel region, the semiconductor layer is formed from a portion of an upper semiconductor layer of a silicon on insulator substrate. In the source and drain regions, the semiconductor layer is formed by epitaxially grown semiconductor material.

主权项

1. An integrated circuit, comprising:
a silicon on insulator substrate having a semiconductor substrate coated with an insulating layer and with a semiconductor layer; a MOS transistor gate supported by a portion of the semiconductor layer forming a channel region and a portion of the insulating layer which insulates the channel region from the semiconductor substrate; an epitaxial source region and epitaxial drain region on opposite sides of the channel region, wherein the epitaxial source region and epitaxial drain region have a depth from a bottom of the MOS transistor gate that is deeper than a depth of the channel region from the bottom of the MOS transistor gate; and an insulating region insulating a bottom of the epitaxial source region and epitaxial drain region from the semiconductor substrate.