| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE |
| 摘要 |
A semiconductor device includes a substrate, a first layer above the substrate and including a nitride semiconductor layer, a second layer on the first layer, having first and second regions and including a nitride semiconductor layer containing Al, and an electrode on the first region. A peak concentration of an implanted material within the second layer in the first region is higher than a peak concentration of the implanted material within the second layer in the second region. |
| 申请公布号 |
US2017069748(A1) |
申请公布日期 |
2017.03.09 |
| 申请号 |
US201615062211 |
申请日期 |
2016.03.07 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SHIBATA Takeshi |
| 分类号 |
H01L29/778;H01L29/10;H01L21/265;H01L29/66 |
主分类号 |
H01L29/778 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a substrate; a first layer above the substrate and including a nitride semiconductor layer; a second layer on the first layer, having first and second regions and including a nitride semiconductor layer containing Al; and an electrode on the first region, wherein a peak concentration of an implanted material within the second layer in the first region is higher than a peak concentration of the implanted material within the second layer in the second region. |
| 地址 |
Tokyo JP |
