| 主权项 |
1. A semiconductor device, comprising:
a substrate; a stacked body provided on the substrate, the stacked body including a plurality of electrode films stacked with an insulating body interposed between the electrode films; a plurality of interconnect portions extending in a stacking direction of the stacked body, dividing the stacked body in a first direction crossing the stacking direction, and separated from each other in the first direction; and a plurality of columnar portions including a semiconductor film extending in the stacking direction in the stacked body, and a charge storage film provided between the semiconductor film and the electrode film, the plurality of columnar portions disposed between the plurality of interconnect portions, the insulating body including a first insulating film provided between the electrode films in a region surrounding the columnar portions, and a gap provided between the electrode films in a region on a lateral side in the first direction of the interconnect portion. |
