SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

According to one embodiment, a semiconductor memory device includes a substrate; a stacked body provided on the substrate, the stacked body including a plurality of electrode layers, a plurality of insulating layers, the plurality of insulating layers having a side surface, a plurality of first conductive films provided between the plurality of electrode layers and the plurality of insulating layers, the plurality of first conductive films having a side surface, and a blocking insulating film, the blocking insulating film including a first portion and a second portion; and a semiconductor film. The first distance between the semiconductor film and the side surface of the plurality of first conductive films is shorter than a second distance between the semiconductor film and the second portion.

主权项

1. A semiconductor memory device, comprising:
a substrate; a stacked body provided on the substrate, the stacked body including
a plurality of electrode layers stacked to be separated from each other,a plurality of insulating layers provided between the plurality of electrode layers, the plurality of insulating layers having a side surface,a plurality of first conductive films provided between the plurality of electrode layers and the plurality of insulating layers, the plurality of first conductive films having a side surface, anda blocking insulating film including a first portion and a second portion, the first portion provided between the plurality of insulating layers and the plurality of first conductive films, the second portion contacting the side surface of the plurality of insulating layers; and a semiconductor film provided inside the stacked body, the semiconductor film extending in a stacking direction of the stacked body, a first distance between the semiconductor film and the side surface of the plurality of first conductive films being shorter than a second distance between the semiconductor film and the second portion.