Warpage Control of Semiconductor Die Package

摘要

Various embodiments of mechanisms for forming a die package using a compressive dielectric layer to contact and to surround through substrate vias (TSVs) in the die package are provided. The compressive dielectric layer reduces or eliminates bowing of the die package. As a result, the risk of broken redistribution layer (RDL) due to bowing is reduced or eliminated. In addition, the compressive dielectric layer, which is formed between the conductive TSV columns and surrounding molding compound, improves the adhesion between the conductive TSV columns and the molding compound. Consequently, the reliability of the die package is improved.

主权项

1. A method comprising:
forming a first passivation layer over a carrier, the first passivation layer having a plurality of openings; forming a plurality of conductive columns over the first passivation layer, wherein the plurality of conductive columns are arranged to surround an open area, wherein each one of the plurality of conductive columns extends into a respective one of the plurality of openings; depositing a compressive dielectric layer to cover the plurality of conductive columns; attaching a semiconductor die to the compressive dielectric layer over the open area, wherein the semiconductor die is surrounded by the plurality of conductive columns; forming a molding compound between the semiconductor die and the plurality of conductive columns, the molding compound being interposed between adjacent ones of the plurality of conductive columns; and forming a first redistribution structure over the semiconductor die and the plurality of conductive columns, wherein a first redistribution layer (RDL) of the first redistribution structure electrically connects with the semiconductor die and the plurality of conductive columns.