LOW OFFSET GRAPHENE HALL SENSOR

摘要

In described examples, a Graphene Hall sensor (GHS) (1101) has a modulated gate bias signal (1112) that alternates at a modulation frequency between a first voltage that produces a first conductivity state in the GHS and a second voltage that produces approximately a same second conductivity state in the GHS. A bias current (1110) may be provided through a first axis of the GHS. A resultant output voltage signal (VH-P, VH-N) may be provided across a second axis of the Hall sensor that includes a modulated Hall voltage and an offset voltage, in which the Hall voltage is modulated at the modulation frequency. An amplitude (1131) of the Hall voltage that does not include the offset voltage may be extracted (1120) from the resultant output voltage signal.