发明名称 |
METHOD OF ENCAPSULATING A SUBSTRATE |
摘要 |
A method (200) of encapsulating a substrate (202) is disclosed, in which the substrate has at least the following layers: a CMOS device layer (204), a layer of first semiconductor material (206) different to silicon, and a layer of second semiconductor material (208), the layer of first semiconductor material arranged intermediate the CMOS device layer and the layer of second semiconductor material. The method comprises: (i) circumferentially removing (252) a portion of the substrate at the edges; and (ii) depositing (254) a dielectric material on the substrate to replace the portion removed at step (i) for encapsulating at least the CMOS device layer and the layer of first semiconductor material. A related substrate is also disclosed. |
申请公布号 |
WO2017039542(A1) |
申请公布日期 |
2017.03.09 |
申请号 |
WO2016SG50423 |
申请日期 |
2016.08.31 |
申请人 |
NANYANG TECHNOLOGICAL UNIVERSITY;MASSACHUSETTS INSTITUTE OF TECHNOLOGY |
发明人 |
LEE, Kwang Hong;LEE, Eng Kian, Kenneth;TAN, Chuan Seng;FITZGERALD, Eugene A.;NGUYEN, Viet Cuong |
分类号 |
H01L21/00;H01L27/00;H01L29/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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