发明名称 |
SEMICONDUCTOR DIE SUBSTRATE WITH INTEGRAL HEAT SINK |
摘要 |
One embodiment of an integrated circuit device (210) includes a semiconductor substrate (212) with a top surface (214), a bottom surface (216) opposite said top surface, and an intermediate portion (244) positioned between the top (214) and bottom (216) surfaces. The device (210) also includes interior substrate surfaces defined by at least one void (242) extending from the bottom surface (216) to the intermediate portion (244). |
申请公布号 |
WO2017040646(A1) |
申请公布日期 |
2017.03.09 |
申请号 |
WO2016US49679 |
申请日期 |
2016.08.31 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED;TEXAS INSTRUMENTS JAPAN LIMITED |
发明人 |
MUKHOPADHYAY, Rajarshi;CAROTHERS, Daniel, N.;COOK, Benjamin |
分类号 |
H01L23/34;H01L21/306;H01L21/50 |
主分类号 |
H01L23/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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