发明名称 SEMICONDUCTOR DIE SUBSTRATE WITH INTEGRAL HEAT SINK
摘要 One embodiment of an integrated circuit device (210) includes a semiconductor substrate (212) with a top surface (214), a bottom surface (216) opposite said top surface, and an intermediate portion (244) positioned between the top (214) and bottom (216) surfaces. The device (210) also includes interior substrate surfaces defined by at least one void (242) extending from the bottom surface (216) to the intermediate portion (244).
申请公布号 WO2017040646(A1) 申请公布日期 2017.03.09
申请号 WO2016US49679 申请日期 2016.08.31
申请人 TEXAS INSTRUMENTS INCORPORATED;TEXAS INSTRUMENTS JAPAN LIMITED 发明人 MUKHOPADHYAY, Rajarshi;CAROTHERS, Daniel, N.;COOK, Benjamin
分类号 H01L23/34;H01L21/306;H01L21/50 主分类号 H01L23/34
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