NITROGEN-CONTAINING COMPOUNDS FOR ETCHING SEMICONDUCTOR STRUCTURES
摘要
A method for etching silicon-containing films is disclosed. The method includes the steps of introducing a vapor of a nitrogen containing etching compound into a reaction chamber containing a silicon-containing film on a substrate, wherein the nitrogen containing etching compound is an organofluorine compound containing at least one C≡N or C=N functional group; introducing an inert gas into the reaction chamber; and activating a plasma to produce an activated nitrogen containing etching compound capable of etching the silicon-containing film from the substrate.
申请公布号
WO2017040518(A1)
申请公布日期
2017.03.09
申请号
WO2016US49479
申请日期
2016.08.30
申请人
L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE;AMERICAN AIR LIQUIDE, INC.;SURLA, Vijay;GUPTA, Rahul;PALLEM, Venkateswara R.