| 主权项 |
1. A light emitting device, comprising:
a carrier; at least one epitaxial structure, disposed on the carrier and comprising:
a first type semiconductor layer;a second type semiconductor layer; andan active layer, located between the first type semiconductor layer and the second type semiconductor layer, wherein a thickness of the second type semiconductor layer is greater than a thickness of the first type semiconductor layer; at least one buffer pad, disposed on a top surface of the carrier and between the carrier and the epitaxial structure, wherein the second type semiconductor layer directly contacts the buffer pad, the epitaxial structure is bonded to the carrier by the buffer pad, and a material of the buffer pad comprises a polymer, and the buffer pad exposes part of the top surface, wherein an area of an orthogonal projection of the second type semiconductor layer is different from of an area of an orthogonal projection of the buffer pad on the carrier; and at least one bonding pad, disposed on the epitaxial structure and between the epitaxial structure and a receiving substrate, wherein the epitaxial structure is electrically connected to the receiving substrate through the bonding pad. |
