SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

According to one embodiment, a semiconductor memory device includes a substrate; a stacked body including a plurality of electrode layers; a semiconductor film extending in stacking direction of the stacked body; an interconnect layer extending in the stacking direction of the stacked body and a first direction crossing the stacking direction; and an insulating film. The interconnect layer includes: a core film extending in the stacking direction and the first direction; an intermediate film provided integrally between the core film and the plurality of electrode layers and between the core film and the substrate; and a first conductive film provided integrally between the intermediate film and the plurality of electrode layers and between the intermediate film and the substrate, being in contact with the substrate, and having an upper surface flush with an upper surface of the intermediate film.

主权项

1. A semiconductor memory device comprising:
a substrate; a stacked body provided on the substrate and including a plurality of electrode layers separately stacked each other; a semiconductor film provided in the stacked body, extending in stacking direction of the stacked body, and electrically connected to the substrate; an interconnect layer provided in the stacked body, extending in the stacking direction and a first direction crossing the stacking direction, and electrically connected to the semiconductor film via the substrate, the interconnect layer including:
a core film extending in the stacking direction and the first direction;an intermediate film provided integrally between the core film and the plurality of electrode layers and between the core film and the substrate; anda first conductive film provided integrally between the intermediate film and the plurality of electrode layers and between the intermediate film and the substrate, the first conductive film being in contact with the substrate, and having an upper surface flush with an upper surface of the intermediate film; and an insulating film provided between the first conductive film and the plurality of electrode layers, the insulating film extending in the stacking direction and the first direction.