SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A performance of a semiconductor device is improved. In a method of manufacturing a semiconductor device, a first semiconductor portion and a second semiconductor portion made of silicon are formed on a base body via an insulation layer, and a third semiconductor portion including a semiconductor layer made of germanium is formed on the second semiconductor portion. Next, an insulation film is formed above the first semiconductor portion, an opening portion reaching the first semiconductor portion from an upper surface of the insulation film is formed, and a metal silicide layer is formed on a part of an upper surface of the first semiconductor portion exposed to the opening portion.

主权项

1. A method of manufacturing a semiconductor device comprising steps of:
(a) preparing a semiconductor substrate having a base body, an insulation layer formed on the base body, and a first semiconductor layer formed on the insulation layer and made of silicon; (b) patterning the first semiconductor layer, and forming a first semiconductor portion made of the first semiconductor layer and a second semiconductor portion made of the first semiconductor layer; (C) forming a first insulation film on the first semiconductor portion and on the second semiconductor portion; (d) forming a first opening portion reaching the second semiconductor portion through the first insulation film; (e) forming a third semiconductor portion including a second semiconductor layer made of germanium on a part of the second semiconductor portion, the part being exposed to the first opening portion; (f) after the step of (e), forming a second insulation film above the first semiconductor portion; (g) forming a second opening portion reaching the first semiconductor portion from an upper surface of the second insulation film; (h) forming a metal silicide layer on a part of an upper surface of the first semiconductor portion, the part being exposed to the second opening portion; and (i) forming a first connection electrode on the metal silicide layer.