SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A semiconductor memory device according to an embodiment includes a substrate, a plurality of conductive members containing a metal and provided on the substrate, a stacked body provided in each region between the conductive members, a semiconductor pillar piercing the stacked body, a memory film and internal stress films. The plurality of conductive members extend in a first direction and are separated from each other in a second direction. The internal stress films also extend in the first direction and are separated from each other in the second direction. The first direction and the second direction are parallel to an upper surface of the substrate and intersect each other. The internal stress films contain material having internal stress having the reverse polarity of internal stress of the metal.

主权项

1. A semiconductor memory device, comprising:
a substrate; a plurality of conductive members provided on the substrate, the plurality of conductive members extending in a first direction, being separated from each other in a second direction, and including a metal, the first direction being parallel to an upper surface of the substrate, the second direction intersecting the first direction and being parallel to the upper surface of the substrate; a stacked body provided in each region between the conductive members, the stacked body including a plurality of insulating films and a plurality of electrode films, each of the plurality of insulating films and each of the plurality of electrode films being stacked along a third direction, the third direction intersecting the upper surface of the substrate; a semiconductor pillar extending in the third direction and piercing the stacked body; a memory film provided between the semiconductor pillar and one of the electrode films; and a plurality of internal stress films extending in the first direction, being separated from each other in the second direction, and including a material having internal stress having the reverse polarity of internal stress of the metal, the internal stress films being disposed above the conductive members and above the stacked bodies.