| 发明名称 |
HETEROJUNCTION BIPOLAR TRANSISTOR |
| 摘要 |
A HBT on a GaAs substrate is presented, wherein its base comprises a first base layer comprising IniGa1-iAs with an Indium content i with a slope s1 and a second base layer on the emitter side comprising IniGa1-jAs with an Indium content j with a slope s2, and an average of s1 is half of the average of s2 or smaller; or the base comprises a first base layer comprising InmGa1-mAs with an Indium content m and a second base layer on the emitter side comprising InnGa1-nAs with an Indium content n, and an average of n is larger than the m at a second base layer side; or the base comprises a first base layer pseudomorphic to GaAs with a bulk lattice constant larger than GaAs, and the emitter comprises a first emitter layer pseudomorphic to GaAs with a bulk lattice constant smaller than GaAs. |
| 申请公布号 |
US2017069739(A1) |
申请公布日期 |
2017.03.09 |
| 申请号 |
US201514846110 |
申请日期 |
2015.09.04 |
| 申请人 |
WIN SEMICONDUCTORS CORP. |
发明人 |
TAKATANI SHINICHIRO;CHIU JUI-PIN;CHANG CHIA-TA |
| 分类号 |
H01L29/737;H01L29/10;H01L29/08;H01L29/205 |
主分类号 |
H01L29/737 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A heterojunction bipolar transistor, comprising a plurality of semiconductor layers epitaxially grown on a GaAs substrate and forming a collector above the GaAs substrate, a base on the collector, and an emitter on the base, wherein the base comprises:
a first base layer comprising IniGa1-iAs with an Indium content i being in the range 0<i<1, the Indium content i is uniformly distributed or varies from an emitter side to a collector side with a first slope s1 being defined as positive when the Indium content i increases from the emitter side to the collector side, and a second base layer inserted between the first base layer and the emitter and comprising InjGa1-jAs with an Indium content j being in the range 0<j<1, the Indium content j varies from the emitter side to the collector side with a second slope s2 being defined as positive when the Indium content j increases from the emitter side to the collector side, wherein an average of the Indium content i is larger than an average of the Indium content j, wherein an average of the slope s2 is positive, and wherein the average of the first slope s1 is half of the average of the second slope s2 or smaller. |
| 地址 |
TAO YUAN CITY TW |
