| 发明名称 |
Semiconductor Wafer, Implantation Apparatus for Implanting Protons and Method for Forming a Semiconductor Device |
| 摘要 |
A method for forming a semiconductor device includes determining at least one electrical parameter for each semiconductor device of a plurality of semiconductor devices to be formed in a semiconductor wafer. The method further includes implanting doping ions into device areas of the semiconductor wafer used for forming the plurality of semiconductor devices with laterally varying implantation doses based on the at least one electrical parameter of the plurality of semiconductor devices. |
| 申请公布号 |
US2017069712(A1) |
申请公布日期 |
2017.03.09 |
| 申请号 |
US201615259446 |
申请日期 |
2016.09.08 |
| 申请人 |
Infineon Technologies Austria AG |
发明人 |
Schustereder Werner;Schulze Hans-Joachim;Weber Hans |
| 分类号 |
H01L29/06;C23C14/48;H01L21/324;H01L21/66;H01L21/265 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming a semiconductor device, the method comprising:
determining at least one electrical parameter for each semiconductor device of a plurality of semiconductor devices to be formed in a semiconductor wafer; and implanting doping ions into device areas of the semiconductor wafer used for forming the plurality of semiconductor devices with laterally varying implantation doses based on the at least one electrical parameter of the plurality of semiconductor devices. |
| 地址 |
Villach AT |
