SEMICONDUCTOR DEVICE AND INFORMATION READING METHOD

摘要

A semiconductor device including a memory device configured to take a plurality of resistance states that are distinguishable from one another; a bias application section configured to apply, in a bias application period, a bias signal to the memory device; and a determination section configured to determine a resistance state of the memory device on the basis of a detection signal, in which the detection signal is generated in the memory device to which the bias signal is applied. The bias application section sets a length of the bias application period in accordance with a resistance value of the memory device, when the resistance state determined by the determination section is predetermined one of the resistance states.

主权项

1. A memory device, comprising:
a plurality of memory cells, each of the memory cells including a first electrode, a memory layer and a second electrode; a bias application section in electrical communication with the memory cells; and a determination section in electrical communication with the memory cells.