发明名称 MEMORY SYSTEM AND METHOD FOR CONTROLLING NON-VOLATILE MEMORY
摘要 According to one embodiment, a memory system perform a first write operation for writing data to a non-volatile memory by a first write method for writing multi-bit information per memory cell. When a power loss event occurs while the data is written, the memory system calculates a remaining time period required to complete write of an unwritten portion of the data. When the remaining time period is longer than a time period required to write the whole of the data by a second write method for writing one-bit information per memory cell, the memory system performs a second write operation for writing the whole of the data by the second write method in place of the first write operation.
申请公布号 US2017068488(A1) 申请公布日期 2017.03.09
申请号 US201514942733 申请日期 2015.11.16
申请人 Kabushiki Kaisha Toshiba 发明人 Shibatani Megumi;Harasawa Akinori
分类号 G06F3/06 主分类号 G06F3/06
代理机构 代理人
主权项 1. A memory system comprising: a power supply circuit configured to supply power to components of the memory system from a backup power source in response to a power loss event; a non-volatile memory including a plurality of blocks; and a controller configured to store data to be written, which is received from a host, in a write buffer temporarily and perform a first write operation for writing the data of the write buffer to a first block of the non-volatile memory by a first write method for writing multi-bit information per memory cell, wherein the controller is configured to: calculate a remaining time period required to complete write of an unwritten portion of the data by the first write operation when a power loss event occurs while the data is written to the first block; perform a second write operation for writing a whole of the data of the write buffer to a second block of the non-volatile memory by a second write method for writing one-bit information per memory cell, in place of the first write operation when the remaining time period is longer than a first time period required to write the whole of the data of the write buffer to the non-volatile memory by the second write method; and continue the first write operation when the remaining time period is not longer than the first time period.
地址 Tokyo JP