发明名称 |
MEMORY SYSTEM AND METHOD FOR CONTROLLING NON-VOLATILE MEMORY |
摘要 |
According to one embodiment, a memory system perform a first write operation for writing data to a non-volatile memory by a first write method for writing multi-bit information per memory cell. When a power loss event occurs while the data is written, the memory system calculates a remaining time period required to complete write of an unwritten portion of the data. When the remaining time period is longer than a time period required to write the whole of the data by a second write method for writing one-bit information per memory cell, the memory system performs a second write operation for writing the whole of the data by the second write method in place of the first write operation. |
申请公布号 |
US2017068488(A1) |
申请公布日期 |
2017.03.09 |
申请号 |
US201514942733 |
申请日期 |
2015.11.16 |
申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
Shibatani Megumi;Harasawa Akinori |
分类号 |
G06F3/06 |
主分类号 |
G06F3/06 |
代理机构 |
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代理人 |
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主权项 |
1. A memory system comprising:
a power supply circuit configured to supply power to components of the memory system from a backup power source in response to a power loss event; a non-volatile memory including a plurality of blocks; and a controller configured to store data to be written, which is received from a host, in a write buffer temporarily and perform a first write operation for writing the data of the write buffer to a first block of the non-volatile memory by a first write method for writing multi-bit information per memory cell, wherein the controller is configured to: calculate a remaining time period required to complete write of an unwritten portion of the data by the first write operation when a power loss event occurs while the data is written to the first block; perform a second write operation for writing a whole of the data of the write buffer to a second block of the non-volatile memory by a second write method for writing one-bit information per memory cell, in place of the first write operation when the remaining time period is longer than a first time period required to write the whole of the data of the write buffer to the non-volatile memory by the second write method; and continue the first write operation when the remaining time period is not longer than the first time period. |
地址 |
Tokyo JP |