发明名称 PHOTOMASK BLANK
摘要 A photomask blank comprising a transparent substrate and a chromium-containing film is provided. The chromium-containing film is constructed by one or more chromium compound layers which are formed of a chromium compound containing Cr, N and optionally O, and have a composition having a Cr content≧30 at % and a total Cr+N+O content≧93 at %, and meeting the formula: 3Cr≦2O+3N. A chromium compound layer meeting a first composition having an N/Cr atomic ratio≧0.95, a Cr content≧40 at %, a total Cr+N content≧80 at %, and an O content≦10 at % is included to a thickness of more than 70% to 100% of the overall thickness of the chromium-containing film.
申请公布号 US2017068154(A1) 申请公布日期 2017.03.09
申请号 US201615239551 申请日期 2016.08.17
申请人 Shin-Etsu Chemical Co., Ltd. 发明人 Sasamoto Kouhei;INAZUKI Yukio
分类号 G03F1/20 主分类号 G03F1/20
代理机构 代理人
主权项 1. A photomask blank which is processed into a photomask suitable for pattern transfer using exposure light of wavelength up to 250 nm, comprising a transparent substrate and a chromium-containing film which is disposed on the substrate directly or through an optical film, wherein said chromium-containing film is constructed by a single chromium compound layer or at least two chromium compound layers, each chromium compound layer is formed of a chromium compound containing chromium and nitrogen, or chromium, nitrogen and oxygen, and has a composition having a chromium content of at least 30 at % and a total content of chromium, nitrogen and oxygen of at least 93 at %, and meeting the formula (1): 3Cr≦2O+3N   (1)wherein Cr is a chromium content (at %), O is an oxygen content (at %), and N is a nitrogen content (at %), when said chromium-containing film is constructed by a single chromium compound layer, the chromium compound layer meets a first composition having an atomic ratio of nitrogen/chromium of at least 0.95, a chromium content of at least 40 at %, a total content of chromium and nitrogen of at least 80 at %, and an oxygen content of up to 10 at %, when said chromium-containing film is constructed by at least two chromium compound layers, the chromium compound layers include at least one chromium compound layer meeting the first composition having an atomic ratio of nitrogen/chromium of at least 0.95, a chromium content of at least 40 at %, a total content of chromium and nitrogen of at least 80 at %, and an oxygen content of up to 10 at %, the total thickness of said at least one chromium compound layer meeting the first composition is in a range of more than 70% to 100% of the overall thickness of the chromium-containing film, and said chromium-containing film has a sheet resistance of not more than 10,000 Ω/□.
地址 Tokyo JP