| 摘要 |
A semiconductor device includes a substrate, a III- nitride buffer layer on the substrate, an N-channel transistor including a Ill-nitride N-channel layer on one portion of the buffer layer, and a Ill-nitride N-barrier layer for providing electrons on top of the N-channel layer, wherein the N-barrier layer has a wider bandgap than the N-channel layer, a P-channel transistor including a Ill-nitride P-barrier layer on another portion of the buffer layer for assisting accumulation of holes, a III- nitride P-channel layer on top of the P-barrier layer, wherein the P-barrier layer has a wider bandgap than the P- channel layer, and a Ill-nitride cap layer doped with P- type dopants on top of the P-channel layer. |
