INDUCTOR DEVICE

摘要

A semiconductor device includes an inductor disposed on a surface of an intermetallic dielectric layer at a location below which no virtual interconnect members are present. Thus, parasitic capacitance is reduced or eliminated and the Q value of the inductor is high.

主权项

1. A semiconductor device comprising:
a front-end device; an interlayer dielectric layer on the front-end device, an interconnect member within the interlayer dielectric layer and connected with the front-end device; a dielectric filling layer within the interlayer dielectric layer; an intermetallic dielectric layer on the interlayer dielectric layer; and an inductor on the intermetallic dielectric layer.