SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

According to one embodiment, a semiconductor memory device includes a first conductive layer, a second conductive layer separated from the first conductive layer in a first direction, a resistance change layer provided between the first and second conductive layers, a third conductive layer, a fourth conductive layer and a first intermediate layer. The third conductive layer is arranged with the first conductive layer in a second direction crossing the first direction. The fourth conductive layer is arranged with the second conductive layer in a direction crossing the first direction. The fourth conductive layer is arranged with the third conductive layer in the first direction. The fourth conductive layer is electrically connected with the third conductive layer. The first intermediate layer is provided between a portion of the third conductive layer and a portion of the fourth conductive layer.

主权项

1. A semiconductor memory device comprising:
a first conductive layer; a second conductive layer separated from the first conductive layer in a first direction; a first resistance change layer provided between the first conductive layer and the second conductive layer; a third conductive layer arranged with the first conductive layer in a second direction crossing the first direction, the third conductive layer containing a material contained in the first conductive layer; a fourth conductive layer arranged with the second conductive layer in a direction crossing the first direction, the fourth conductive layer being arranged with the third conductive layer in the first direction, electrically connected with the third conductive layer, and containing a material contained in the second conductive layer; and a first intermediate layer provided between a portion of the third conductive layer and a portion of the fourth conductive layer and containing a material contained in the first resistance change layer.