发明名称 Method of Preventing Pattern Collapse
摘要 A device includes a substrate and at least three conducting features embedded into the substrate. Each conducting feature includes a top width x and a bottom width y, such that a top and bottom width (x1, y1) of a first conducting feature has a dimension of (x1<y1), a top and bottom width (x2, y2) of a second conducting feature has a dimension of (x2<y2; x2=y2; or x2>y2), and a top and bottom width (x3, y3) of a third conducting feature has a dimension of (x3>y3). The device also includes a gap structure isolating the first and second conducting features. The gap structure can include such things as air or dielectric.
申请公布号 US2017069573(A1) 申请公布日期 2017.03.09
申请号 US201615357832 申请日期 2016.11.21
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Ting Chih-Yuan;Wu Chung-Wen;Chen Jeng-Shiou;Tsai Jang-Shiang;Shieh Jyu-Horng
分类号 H01L23/528;H01L23/532;H01L21/768;H01L23/522 主分类号 H01L23/528
代理机构 代理人
主权项 1. A device comprising: a first conductive feature and a second conductive feature disposed within a substrate, wherein the first conductive feature has a top surface facing away from the substrate; a first barrier layer separating the substrate and the first conductive feature; a second barrier layer formed over the top surface of the first conductive feature and extending beyond the first barrier layer into the substrate such that the second barrier layer extends into the substrate at a greater depth than the first barrier layer; and a gap structure disposed between the first conductive feature and the second conductive feature.
地址 Hsin-Chu TW