METHOD FOR FORMING SEMICONDUCTOR STRUCTURE WITH NANOWIRE STRUCTURES

摘要

The present invention provides a method for forming a semiconductor structure. Firstly, a substrate is provided, the substrate comprises an insulating layer and at least one first nano channel structure disposed thereon, a first region and a second region being defined on the substrate, next, a hard mask is formed within the first region, afterwards, an etching process is performed, to remove parts of the insulating layer within the second region, an epitaxial process is then performed, to form an epitaxial layer on the first nano channel structure, and an anneal process is performed, to transform the first nano channel structure and the epitaxial layer into a first nanowire structure, wherein the diameter of the first nanowire structure within the first region is different from the diameter of the first nanowire structure within the second region.

主权项

1. A method for forming a semiconductor structure, comprising:
providing a substrate, the substrate comprising an insulating layer and at least one first nano channel structure disposed thereon, a first region and a second region being defined on the substrate; forming a hard mask within the first region, to cover the first nano channel structure and the insulating layer; performing an etching process, to remove parts of the insulating layer within the second region; performing an epitaxial process, to form an epitaxial layer on the first nano channel structure, wherein the thickness of the epitaxial layer within the first region is different from the thickness of the epitaxial layer within the second region; and performing an anneal process, to transform the first nano channel structure and the epitaxial layer into a first nanowire structure, wherein the diameter of the first nanowire structure within the first region is different from the diameter of the first nanowire structure within the second region.