发明名称 |
TECHNIQUES TO PREVENT FILM CRACKING IN THERMALLY CURED DIELECTRIC FILM, AND ASSOCIATED CONFIGURATIONS |
摘要 |
Embodiments of the present disclosure describe techniques to prevent film cracking in thermally cured dielectric film, and associated configurations. A dielectric film may be formed on a patterned metal layer and a substrate on which the patterned metal layer is disposed. A photo-patterned dielectric resist film may be formed on the dielectric film, while providing an opening in the dielectric resist film over the metal layer. A first curing process may be performed to remove a solvent from the dielectric resist film. An exposed portion of the dielectric film, that is disposed in the opening, may then be removed. A second curing process may be performed after the exposed portion of the dielectric film is removed, to polymerize the dielectric resist film. Other embodiments may be described and/or claimed. |
申请公布号 |
WO2017039671(A1) |
申请公布日期 |
2017.03.09 |
申请号 |
WO2015US48324 |
申请日期 |
2015.09.03 |
申请人 |
INTEL CORPORATION |
发明人 |
KHIRE, Vaibhav S.;GANESAN, Krishna Prakash;LYTLE, Wayne M.;SATTIRAJU, Seshu V. |
分类号 |
H01L21/027;H01L21/28;H01L21/31 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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