| 摘要 |
A process for forming an amorphous silicon hydride film by depositing an amorphous silicon hydride film onto a substrate by a high frequency sputtering comprises applying a DC or high frequency, bias voltage to at least one of a target composed of a material containing Si atom and a substrate with a discharge frequency of 50 MHz or more and using an inert gas containing hydrogen in a controlled amount of 0.1 atomic % or more as an electric discharge gas. <IMAGE> |
